III-V Epi’s Dr. Neil Gerrard named on the epitaxially regrown, QD PCSELs white paper.
10 July 2024
III-V Epi’s Director of Epitaxy, Dr. Neil Gerrard, is amongst the expert contributors to the newly published white paper, ‘Epitaxially regrown quantum dot photonic crystal surface emitting lasers.” III-V Epi was responsible for the epitaxial regrowth of the GaAs-based devices, which were monolithically integrated on the same wafer. These lased at ∼1230 nm with an excited state lasing at ∼1140 nm, aimed at datacoms applications, with threshold current densities of 0.69 kA/cm2 and 1.05 kA/cm2, respectively.
Dr. Neil Gerrard, said, “PCSELs (Photonic Crystal Surface Emitting Lasers) are a new class of semiconductor laser which has a 2D photonic crystal within its device structure. They uniquely offer simultaneous high-power and single-mode vertical emission. They also offer features such as narrow divergence, beam steering, control of wavelength, and polarization, making PCSELs attractive in a diverse range of semiconductor laser applications.
“Epitaxial regrowth is the preferred method for fabricating PCSELs, as many detrimental defects associated with producing other types of lasers can be eliminated and high power and high efficiency realised. Epitaxial regrowth also brings greater flexibility in PC design, allowing for the build of both void-semiconductor contrast PCSELs, which offer the best performance in terms of power and efficiency, and all-semiconductor PCSELs, with large associated coupling coefficients.”
A comprehensive summary of the white paper can be found in Applied Physics Letters, a subsidiary of the American Institute of Physics (AIP):